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Other articles related with "nitride semiconductor"：
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67304 |
Dakhlaoui H, Almansour S |
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Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes |
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Chin. Phys. B
2016 Vol.25 (6): 67304-067304
[Abstract]
(694)
[HTML 1 KB]
[PDF 305 KB]
(269)
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66105 |
Xu Ke (徐科), Wang Jian-Feng (王建峰), Ren Guo-Qiang (任国强) |
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Progress in bulk GaN growth |
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Chin. Phys. B
2015 Vol.24 (6): 66105-066105
[Abstract]
(700)
[HTML 1 KB]
[PDF 938 KB]
(1911)
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67201 |
Ji Dong(冀东), Liu Bing(刘冰), Lu Yan-Wu(吕燕伍), Zou Miao(邹杪), and Fan Bo-Ling(范博龄) |
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Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (6): 67201-067201
[Abstract]
(1283)
[HTML 1 KB]
[PDF 138 KB]
(768)
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